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Martin Bygdås

Image of Martin Bygdås
Visiting address Gaustadalléen 23A Kristen Nygaards hus
Postal address Postboks 1048 Blindern 0316 Oslo

Academic interests

Point defects in semiconductors for quantum technology.
Specifically, single-photon emitters in Aluminium nitride (AlN).
Density Functional Theory (DFT).

Background

2019-2024 M.Sc. Applied Physics and Mathematics, specializing in Applied Physics, NTNU.
Master Thesis: "Electronic Structure of the Topological Material Bi2Se3 in selected Nanoscale Configurations"

Tags: LENS, Semiconductor physics, SMN

Publications

  • Frøland, Mariann Carlsen; Furlan, Riccardo; Bygdås, Martin; Olsen, Vegard Standeren; Bathen, Marianne Etzelmüller & Vines, Lasse (2026). Sputtered Aluminum Nitride Thin Films as Waveguides and Hosts for Single-Photon Emitters. Full text in Research Archive
  • Bygdås, Martin; Zalandauskas, Vytautas; Frøland, Mariann Carlsen; Farsund, Øystein; Vines, Lasse & Bathen, Marianne Etzelmüller (2026). Intrinsic defects in AlN for single-photon emission and spin manipulation. Full text in Research Archive

View all works in NVA

Published Aug. 1, 2025 2:00 PM - Last modified Oct. 6, 2025 1:40 PM