A model for pinned photodiodes

Having an accurate and reliable model for electron generators is important when it comes to design of blocks dealing with elements such as photodiodes (PD) or ISFETs. Common way to simulate/analyse this type of blocks is to replace the photo diode with a current source. This may result in some unrealistic voltage developments on sensitive nodes or leakages not expected. Recent advances in photo-sensors field brings the need for an appropriate PD model under the spotlight.

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This project is in collaboration with SONY Semiconductor Solutions Europe.

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The goal of the project is to develop a model for pinned photodiodes which injects specified number of electrons into floating diffusion node. It would make it possible to design optical or other similar systems with more accuracy. Also, it can result in reduced try and error tape-outs and help to save time and money.

The student will work to make a behavioural/Verilog A model for photodiodes. The model should be approved through comparison with TCAD simulations and real photodiode measurements.

Emneord: ASIC, CMOS, Image Sensor, TCAD, Verilog A
Publisert 26. okt. 2020 14:04 - Sist endret 27. okt. 2020 10:38

Veileder(e)

Omfang (studiepoeng)

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